S/N

Name 

Acronym/Molecular formula

CAS No.

Structural Formula

Purity

Application 

1

Tetraethyl orthosilicate

TEOS

78-10-4

9N

Used for silicon dioxide/silicon nitride (SiO₂/Si₃N₄) films

2

Trimethylaluminum

TMA

75-24-1

5N、6N

Used for Al₂O₃ passivation layer and/or high-k dielectric films.

3

Phosphorus oxychloride

POCl₃

10025-87-3

6N、7N

Used for  N-Type doping.

4

Titanium tetrachloride

TiCl₄

7550-45-0

7N

Used for TiN films.

5

Trans-1,2-dichloroethylene

DCE

156-60-5

7.5N

Used for chloride-enhanced oxidation and furnace tube cleaning

6

Hexachlorodisilane

HCDS

13465-77-5

7N

Used for silicon dioxide/silicon nitride (SiO₂/Si₃N₄) films.

7

Red phosphorus

P₄

7723-14-0

6N

Used for the synthesis of indium phosphide (InP)and gallium phosphide (GaP).

A solid phosphorus source for N-Type doping

8

Trimethyl phosphite

TMP

121-45-9

8.5N 

A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

9

Triethyl phosphate

TEPO

78-40-0

8.5N 

A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

10

Triethyl borate

TEB

150-46-9

8.5N 

A boron source for the deposition of  phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

11

Trimethyl borate

TMB

121-43-7

8.5N 

A boron source for the deposition of  phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

12

Boron tribromide

BBr₃

10294-33-4

6N、7N

A liquid boron source used for P-Type doping.

13

Hexamethyldisilazane

HMDS

999-97-3

6N

Used for the deposition of low-k dielectric films.

14

Tetra(dimethylamino)silane

TDMASi

1624-01-7

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

15

Bis(diethylamino)silane

BDEAS

27804-64-4

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

16

Diisopropylaminosilane

DIPAS

908831-34-5

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

17

Tris(dimethylamino)silane

3DMAS/TDMS

15112-89-7

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

18

Bis(tert-butylamino)silane

BTBAS

186598-40-3

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

19

Tris(silyl)amine

TSA

13862-16-3

6N

Used for the deposition of silicon nitride (Si₃N₄)  films.

20

Indium trichloride

InCl₃

10025-82-8

6N

Used for the deposition of indium (In) films.

21

Dimethyl(Dimethylaminopropyl)indium

DADI

120441-92-1

6N

Used for the deposition of indium (In) films.

22

Tetrakis(dimethylamino)titanium

TDMAT

3275-24-9

6N

Used for the deposition of TiN films.

23

Tris(dimethylamino)(cyclopentadienyl)zirconium

CpZr(NMe₂)₃     [AMG1Zr]

33271-88-4

6N

Used for the deposition of high-k dielectric films.

24

(Propylcyclopentadienyl)tris(dimethylamino)zirconium

n-PrCpZr(NMe)₃ (IPZ235)

2192174-63-1

7N

Used for the deposition of high-k dielectric films.

25

Tetrakis(methylethylamino)zirconium

TEMAZr

175923-04-3

6N

Used for the deposition of high-k dielectric films.

26

Tetrakis(methylethylamino)hafnium

TEMAHf

352535-01-4

6N

Used for the deposition of high-k dielectric films.

27

Hafnium tetrachloride

HfCl₄

13499-05-3

6N

Used for the deposition of high-k dielectric films.

28

Tris(dimethylamino)(cyclopentadienyl)hafnium

CpHf(NMe₂)₃  [AMG1Hf]

941596-80-1

6N

Used for the deposition of high-k dielectric films.

29

Pentakis(dimethylamino)tantalum

PDMATa

19824-59-0

6N

Used for the deposition of tantalum Nitride(TaN) films.

30

(3,3-dimethyl-1-butynyl)hexacarbonyldicobalt

CCTBA

56792-69-9

6N

Used for the deposition of cobalt (Co) films.

31

Dicarbonylcyclopentadienylcobalt

CpCo(CO)₂

12078-25-0

6N

Used for the deposition of cobalt (Co) films.

32

Tris(isopropylcyclopentadienyl)lanthanum

(i-PrCp)₃La

68959-87-5

6N

Used for the deposition of high-k dielectric films.

33

Tris(isopropylcyclopentadienyl)cerium

(i-PrCp)₃Ce

122528-16-9

6N

Used for the deposition of high-k dielectric films.

34

(tert-butylimido)bis(dimethylamino)(cyclopentadienyl)niobium

CpNb(^tBuN)(NMe₂)₂

1221522-53-7

6N

Used for the deposition of high-k dielectric films.

35

(Pentamethylcyclopentadienyl)trimethoxytitanium

Star-Ti

123927-75-3

6N

Used for the deposition of high-k dielectric films.

36

Dichloro(dioxo)molybdenum(VI)

MOLY

13637-68-8

6N

Used for the deposition of  molybdenum (Mo) films.

37

Hexacarbonyltungsten

W(CO)₆

14040-11-0

6N

Used for the deposition of  tungsten (W) films.

38

Tungsten hexachloride

WCl₆

13283-01-7

6N

Used for the deposition of  tungsten (W) films.

39

Aluminum trichloride

AlCl₃

7446-70-0

5N

Used for the deposition of high-k dielectric films.

40

Methyldiethoxysilane

DEMS,MDES

2031-62-1

7N

Used for the deposition of low-k dielectric films.

41

Octamethylcyclotetrasiloxane

OMCTS

556-67-2

9N

Used for the deposition of low-k dielectric films.

42

Tetramethylcyclotetrasiloxane

TMCTS

2370-88-9

6N

Used for the deposition of low-k dielectric films.

43

Dimethyldimethoxysilane

DMDMOS

1112-39-6

7N

Used for the deposition of low-k dielectric films.

44

Tetramethylsilane

4MS,TMS

75-76-3

7N

Used for the deposition of low-k dielectric films.

45

Tetramethyldisiloxane

AP/AM-

1133/TMDSO/HMM

3277-26-7

7.5N

Used for the deposition of low-k dielectric films.

46

Triethylamine

RENA/TEA

121-44-8

7N

Used for the deposition of silicon nitride (Si₃N₄)  films.

47

Diiodosilane

H₂SiI₂

13760-02-6

6N

Used for the deposition of low-k dielectric films.- The use of this material is normally for Si₃N₄?

48

Dichlorodimethylsilane

Me₂Cl₂Si

75-78-5

7N

Used for the deposition of low-k dielectric films.

49

alpha-Terpinene

ATRP

99-86-5

7N

Used as porogen for the deposition of low-k dielectric films

50

Phosphorus pentoxide

P₂O₅

1314-56-3

6N

Used for the synthesis ofKDP, KTP and DKDP materials.

51

Trichloroethylene

TCE

79-01-6

7N

Solvent or cleaning agent.

52

Hexane

Hexane

110-54-3

7N

Solvent or cleaning agent.

53

Octane

Octane

111-65-9

7N

Solvent or cleaning agent.

54

1-Hexene

1-Hexene

592-41-6

7N

Solvent or cleaning agent.

55

Methylaluminoxane

MAO

120144-90-3

Used as co-catalyst with metallocenes for the olefin polymerization.

56

Isobutyl-modified methylaluminoxane

B-MAO（MMAO-3）

Used as co-catalyst with metallocenes for the ethylene oligomerization.

57

Octyl-modified methylaluminoxane

O-MAO（MMAO-7）

Used as co-catalyst with metallocenes for the olefin polymerization.