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Tetraethyl orthosilicate (TEOS)

It is mainly used in the chemical vapor deposition (CVD) process in the wafer manufacturing process to generate silicon dioxide films. It is an electronic chemical required for the manufacture of semiconductors, discrete devices, and microelectromechanical systems (MEMS). It is a substitute for silane and other flammable silicon sources.


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Details Introduction

1. molecular formula:Yes (C2H5O)4

2. molecular weight:208.33

3. physical and chemical properties

Colorless transparent liquid, melting point -77 ℃, boiling point 169 ℃, density 0.9346 g/mL. It is more stable to the air; slightly soluble in water, slow hydrolysis in pure water; in the presence of acid or alkali can accelerate the hydrolysis.

4. uses

It is mainly used in the chemical vapor deposition (CVD) process in the wafer manufacturing process to generate silicon dioxide films. It is an electronic chemical required for the manufacture of semiconductors, discrete devices, and microelectromechanical systems (MEMS). It is a substitute for silane and other flammable silicon sources.

5. quality indicators

Analysis Project

Technical indicators

Technical indicators

8N

9N

Purity, min

99.999999%

99.9999999%

Main content, min

99.99%

99.99%

Boron, max

0.5 ppb

0.5 ppb

Cl-,max

0.5 ppm

0.05 ppm

Moisture, max

5 ppm

5 ppm

Ethanol content, max

3 ppm

3 ppm

Number of particles ≥ 0.1 µm,max

50 p/ml

50 p/ml

Number of particles ≥ 0.2 µm,max

30 p/ml

10 p/ml

Number of particles ≥ 0.3 µm,max

20 p/ml

7 p/ml

Number of particles ≥ 0.5 µm,max

10 p/ml

5 p/ml

Number of particles ≥ 1.0 µm,max

3 p/ml

1 p/ml

Chroma, max

It's 10 APHA

It's 10 APHA

 

6. packaging

Container: Stainless steel bottle

Outer packing: stainless steel cabinet

Specifications: 2 gallons, 5 gallons (19L), 10 gallons, 1.5L, 3.0L, 200L.

 

 

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