In order to implement the tasks proposed in the outline of national medium and long term science and technology development plan (2006-2020) and made in China 2025, the national key R & D plan launched the implementation of the key special project of "strategic advanced electronic materials". According to the deployment of this key special implementation plan, the 2018 project application guide is hereby issued.

The overall objectives of this key project are: facing the urgent needs of the strategic advanced electronic materials in the field of energy saving, environmental protection, intelligent manufacturing and new generation information technology, supporting the major strategic objectives of "China made 2025" and "Internet +", aiming at the commanding heights of global technology and Industry, and catching the historical development opportunities of "road changing and overtaking" in China, with third generation semiconductors. Materials and semiconductor lighting, new display as the core, high-power laser materials and devices, high-end optoelectronics and microelectronics materials as the focus, through institutional mechanism innovation, cross-border technology integration, build a whole innovation chain of basic research and cutting-edge technology, major common key technology, typical application demonstration, and carry out integrated organization and implementation. Cultivate a number of innovation and entrepreneurship teams, cultivate a number of leading enterprises with international competitiveness, and form distinctive industrial bases.

In accordance with the four technical directions of the third generation semiconductor materials and semiconductor lighting, new display, high-power laser materials and devices, and high-end optoelectronics and microelectronics materials, this key project has deployed 35 research tasks. The special implementation cycle is 5 years (2016-2020).

In 2016, 27 projects with 15 research tasks have been launched in 4 technical directions. In 2017, 37 projects with 15 research tasks have been launched in 4 technical directions. In 2018, five research tasks will be launched in four technical directions, and 12-24 projects will be supported. The total budget of the national allocation is proposed to be 177 million yuan. For projects led by enterprises and typical application demonstration projects, supporting funds shall be self raised, and the proportion between the total supporting funds and the total national funds shall not be less than 1:1.

The project application shall be conducted in accordance with the research direction of the secondary title (such as 1.1) of the guide. Unless otherwise specified, the number of projects to be supported is 1-2. The project implementation period shall not exceed 4 years. The research content of the application project must cover all the assessment indicators listed in the guide under the secondary title. In principle, the number of subjects under the project shall not exceed 5, and the number of participating units of each subject shall not exceed 5. One project leader is set for the project, and one project leader is set for each project.

In the guide, "the number of projects to be supported is 1-2", which means that under the same research direction, when the top two evaluation results of the declared projects are similar and the technical route is obviously different, the two projects can be supported at the same time. The two projects will be supported in two phases. After the completion of the first phase, the implementation of the two projects will be evaluated, and the subsequent support methods will be determined according to the evaluation results.

1. Research on new structural materials and new functional devices of the third generation semiconductor

1.1 research on ultra wide band gap semiconductor materials and devices (Basic Research)

Research contents: Research on growth, doping, defect control and photoelectric properties of ultra wide band gap semiconductor single crystal substrate and epitaxial materials such as diamond, gallium oxide and boron nitride; research on key technology of material processing and device preparation; research on high-performance devices based on the above ultra wide band gap semiconducting materials.

The results show that the diameter of diamond single crystal substrate and epitaxial material is more than 2 inches, the half width of X-ray swing curve diffraction peak is less than 50 arcsec, the surface roughness of root mean square is less than 1 nm, the p-type hole concentration of doped diamond is more than 1 × 1018 cm-3, the n-type electron concentration is more than 1 × 1016 cm-3, the room temperature electron and hole mobility of non doped diamond are 3000 cm2 / V · s and 2500 cm2 / V · s, respectively Diamond prototype electronic device and deep UV photoelectric device; gallium oxide single crystal material diameter ≥ 3 inches, dislocation density ≤ 104 cm-2, gallium oxide metal oxide semiconductor field effect transistor (MOSFET) device, breakdown voltage ≥ 1000 V, on resistance ≤ 2 m Ω· cm2; high quality boron nitride epitaxial film, boron nitride deep UV photoelectric exploration with wavelength ≤ 230 nm Switch ratio of tester and device ≥ 5 × 103. He has applied for 15 invention patents and published 20 papers.

1.2 research on new structural materials and new functional devices of nitride semiconductor (Basic Research)

Research contents: Research on controllable preparation of low dimensional quantum structure of nitride semiconductor, single photon emission device based on quantum dot structure; research on epitaxial growth of subband transition quantum well structure of nitride semiconductor and dual color detection device of ultraviolet and infrared; research on terahertz emission and detection device of nitride semiconductor; research on spin property and spin field effect transistor of nitride semiconductor 。

Assessment index: realize the room temperature single photon source of optical pumped UV or blue band based on the quantum structure of nitride semiconductor, with the second-order correlation degree ≤ 0.3; the working temperature of GaN based 3-5 μ m infrared detector ≥ 77 K, realize the single-chip integration of UV-IR dichroic detector; realize the GaN based terahertz emission and detection device, emission device ≥ 0.3 THz room temperature The output power is ≥ 8 μ W, and the spin injection efficiency is ≥ 8%. He has applied for 15 invention patents and published 20 papers.

1.3 research on new lighting materials and devices of the third generation semiconductor (Basic Research)

Research contents: Research on the third generation semiconductor laser for laser lighting; research on the fluorescent materials suitable for laser high power density excitation, research on laser lighting optical system and application products; research on all-optical spectrum white light lighting materials and devices based on single chip technology; research on the epitaxial growth and device research of high-quality nitride semiconductor on amorphous substrate, graphene and other insertion layers Based on the new organic and inorganic perovskite materials, the research of high efficiency LED was carried out.

Assessment index: the color temperature can be adjusted from 3000K to 6000K, and the color rendering index can reach 85, and the application products such as automobile laser lighting can be developed; the efficiency of single-chip full spectrum white light device is ≥ 100 LM / W, and the color rendering index reaches 90; the quantum efficiency of gallium nitride based LED chip based on new amorphous substrate is ≥ 40%; the brightness of perovskite LED is ≥ 105 CD /M2, external quantum efficiency ≥ 20%. He has applied for 20 invention patents and published 15 papers.

2. Three primary color laser display production demonstration line

2.1 production demonstration line of three primary color laser display machine (typical application demonstration type)

Research content: design the process of production demonstration line of three primary color laser display machine, and carry out engineering development of technology, equipment and detection. The demonstration line includes: design and development of key process equipment of the whole machine; automatic detection technology and platform of high-efficiency laser drive system; detection technology and equipment development of various interferences such as laser display speckle; automatic test system and platform of video signal fidelity response.