TECHNOLOGY
Electronic materials: strive to break through the industrialization problem of high-end products
- Categories:Company news
- Author:
- Origin:China industrial economy information network
- Time of issue:2019-12-02 14:12
- Views:0
(Summary description)In the past 40 years of reform and opening up, great changes have taken place in China's electronic material industry, and the development of electronic material technology is changing with each passing day. After years of development, China has accumulated a relatively solid research foundation in the field of electronic materials
Electronic materials: strive to break through the industrialization problem of high-end products
(Summary description)In the past 40 years of reform and opening up, great changes have taken place in China's electronic material industry, and the development of electronic material technology is changing with each passing day. After years of development, China has accumulated a relatively solid research foundation in the field of electronic materials
- Categories:Company news
- Author:
- Origin:China industrial economy information network
- Time of issue:2019-12-02 14:12
- Views:0
In the past 40 years of reform and opening up, great changes have taken place in China's electronic material industry, and the development of electronic material technology is changing with each passing day. After years of development, China has accumulated a relatively solid research foundation in the field of electronic materials, forming a better ecological environment for electronic materials research and development, reaching the international advanced level in some fields. The development of electronic materials provides an important technical support for China's electronic information manufacturing industry to achieve a major transformation from scratch, from small to large, and provides an important guarantee for the construction of major projects and the consolidation of national defense. In the new era, with the improvement and rise of China's scientific and technological strength and national defense strength, it is imperative to enhance the supporting capacity of the electronic material industry, which is of great strategic significance to accelerate the transformation of China's economic development mode, enhance the national defense strength and enhance the comprehensive national strength.
Main achievements in the development of electronic materials in China
Electronic materials are the foundation and forerunner of electronic information technology, the most important and potential field in the 21st century, the cradle of new technology, new products and new equipment in the field of electronic information, the important basic and leading industry, which supports the development of electronic information technology. The successful development of silicon single crystal materials, transistors and silicon-based integrated circuits has given birth to a revolution in the electronic industry, and desktop computers represented by PC computers have entered thousands of households. The invention of optical fiber materials and semiconductor lasers based on gallium arsenide materials has brought mankind into the era of optical fiber communication and high-speed, broadband information networks. Throughout the history of information technology development, it is not difficult to see that the great leap forward development of information technology in all stages has experienced a generation of materials, a generation of devices, and a generation of new electronic systems.
Since the reform and opening up, after 40 years of development, China's electronic material industry has formed a relatively complete electronic material development system, the industrial scale continues to expand, and the technical level continues to improve, which better supports the development of domestic electronic information manufacturing industry. Since the 18th National Congress of the Communist Party of China, the development of electronic materials has been highly valued by the state. In a series of guiding policies, such as the outline for the development of the national integrated circuit industry, the 13th five year plan for the development of national strategic emerging industries, and the guiding opinions on accelerating the innovation and development of new material industry, advanced electronic materials have been listed as the key development and support objects, aiming to accelerate the development of electronic materials in China The development process of material industry should respond to a new round of material reform.
At present, there are more than one thousand institutions of higher learning, research institutes and production enterprises mainly engaged in the research and production of electronic materials in China. In the past three years, with the economic development entering the new normal, the economic operation of the domestic electronic material industry has also entered the normal development, with an average annual growth rate of sales revenue of about 7%. At present, the total scale of the domestic electronic material market is more than 700 billion yuan, of which the sales volume of major electronic materials with a large amount and a wide range is more than 300 billion yuan. The industry as a whole is in a steady development trend, with a large proportion of low-end electronic materials. With the emphasis on technological innovation and the improvement of the understanding that quality is the lifeblood of enterprises, the transformation and upgrading of high-end electronic materials are accelerating.
Silicon as the representative of a generation of semiconductor materials is the most important basic materials in the integrated circuit manufacturing industry, known as the "food" of the information industry. In recent two years, with the growth of market demand for 8-12 inch silicon wafers, domestic silicon chip manufacturers are booming. Shanghai Xinsheng Semiconductor Technology Co., Ltd., Chongqing Chaosi, Ningxia Yinhe Semiconductor Technology Co., Ltd., Zhengzhou Hexing, Beijing Youyan, China Electronics Technology and other companies have invested in the construction, expansion and preparation of 8-inch and 12 inch silicon chip production lines. At present, China has achieved self-sufficiency of small size silicon materials of 6-inch and below; key technologies of 8-inch silicon wafer industrialization have been broken through, initially forming industrialization capacity; key technologies of 12 inch silicon wafer have been broken through, but industrialization technology is not mature.
The second generation semiconductor materials, such as gallium arsenide and indium phosphide, show obvious advantages in the application fields of microwave and millimeter wave devices and photoelectric devices. At present, the 46th Institute of China Electronics Technology Group Corporation has broken through the preparation technology of 4-inch semi insulated gallium arsenide, forming a batch supply capacity, partially replacing imported products, and 6-inch semi insulated gallium arsenide single crystal has developed products; low resistance gallium arsenide materials for LED have been localized to meet the needs of LED industry; the 13th and 46th Institute of China Electronics Technology Group Corporation and Semiconductor Institute of Chinese Academy of Sciences is the main research and development unit of InP materials in China, which represents the highest level of InP research in China. The technology of 4-inch semi insulating InP has broken through and reached the international advanced level.
The third generation semiconductor materials, represented by silicon carbide and gallium nitride, are mainly used in high frequency, high power, power electronics and other devices. The domestic research and development units of silicon carbide materials mainly include No.2 Institute and No.46 Institute of China Electronics Technology Group Corporation, tiankeheda, Shandong Tianyue, etc. the preparation technology of 4-inch and 6-inch semi insulated silicon carbide has been broken through, realizing the small batch supply of 4-inch semi insulated silicon carbide; the low resistance silicon carbide single crystal has formed certain industrialization ability, but the industrialization technology is not mature.
The ultra wide band gap semiconductor materials, represented by AlN, diamond and β - Ga2O3, are indispensable single crystal substrate materials for high frequency and high power microwave devices, high voltage and high current power electronic devices, and high sensitivity solar blind UV detector devices in the future. The main research and development units in China include the 46th Institute of China Electronics Technology Group, Institute of physics, Shanghai Institute of Optics and mechanics, Shanghai Institute of silicon, Xi'an Jiaotong University, etc. at present, we have obtained Φ 30mm AlN single crystal, 2-inch β - Ga2O3 single crystal, and 12 × 12mm2 single crystal diamond.
Problems and challenges in the development of electronic materials industry in China
The achievements in the development of China's electronic material industry are obvious to all, but there is still a big gap compared with the world's advanced level. There are still some outstanding contradictions and problems in the development process, which restrict the further development of China's electronic material industry, mainly reflected in the following four aspects:
1. The enterprise is small in scale, weak in competitiveness, and insufficient in R & D and equipment investment. China's existing electronic material enterprises are generally small in scale and relatively small in annual income. Compared with the international large enterprises, the R & D and equipment investment is small and the competitiveness is weak. For example, in the field of semiconductor silicon materials, the total assets of Xinyue (semiconductor materials) and sumco are more than 30 billion yuan, and the total assets of wacksnik are more than 13 billion yuan. The business income of Xinyue is more than 15 billion yuan, sumco is more than 13 billion yuan, and wackeshi is more than 8 billion yuan. Foreign enterprises usually use 5% - 8% of the sales volume for research and development, and more than 10% of the sales volume for equipment investment. Most of the domestic electronic materials enterprises are small in scale and have little business income. Accordingly, they have less investment in R & D and equipment, which makes it difficult to compete with the international large enterprises.
2. The original innovation ability is insufficient, and the self-sufficiency rate of high-end products is not high. In China, the original innovation ability of electronic materials is insufficient. The research of materials mainly focuses on follow-up research and imitation. There is a lack of deep communication and original theoretical research between different disciplines. There are few technologies with independent intellectual property rights, which can not support the development of materials from the source. Mature products are concentrated in low-end fields, with low added value and limited profits. High-end products rely on imports, which is not conducive to the expansion of reproduction and scientific and technological investment of material production enterprises, which to a large extent restricts the leapfrog development of electronic material industry.
3. The combination of production, teaching, research and application is not close, and the industrialization ability is not strong. There is no effective "production, learning, research and application" coordination mechanism. The transformation ability of scientific and technological achievements to the market is not strong. The technical barriers between material manufacturers and application units are not broken. After a period of hard work, many kinds of electronic materials in China have reached a certain level of performance indicators. However, due to the start later than abroad, the total investment is also limited, so the quality consistency The stability and other aspects inevitably have some gaps with foreign products, and this gap is difficult to narrow only relying on the efforts of the material development unit itself. It must rely on the joint efforts of the application unit, and improve through continuous application verification to be solved and realize the industrialization development.
4. The innovative R & D mechanism is not perfect, so it is difficult to adapt to the development requirements of the new era. The development of high-end electronic materials requires a group of high-level leading talents with solid basic theories and mastering the world's cutting-edge technologies. At present, there is a lack of implementation rules and specific guidance for the implementation of the relevant policies of talent incentive, some mechanisms are difficult to implement, high-end talents are not attracted enough, and talent vitality is not fully developed. We need to further improve policies and systems for intellectual property protection and transformation of achievements. The transformation rate of scientific and technological achievements is not high, and new technological products do not provide enough support for market development.
Suggestions for promoting the development of electronic materials industry
1. Strengthen top-level planning and improve industrial policies. We will strengthen government guidance, do a good job in top-level planning, increase national policies and financial support, formulate guidance catalogues and investment guidelines for the development of electronic materials industry, and improve the industrial chain, innovation chain and capital chain. We will strive to break through the industrialization of high-end electronic materials and improve the basic support ability and international competitiveness of electronic materials for China's electronic information industry.
2. Encourage original innovation and improve the level of independent innovation. Innovation is the first driving force to lead development. We should adhere to innovation as the leading force, encourage original innovation and independent innovation, and create a scientific atmosphere for innovation in the whole industry. Aim at the international advanced technology of electronic materials, form technical advantages in key areas, maintain advantages, improve the ability of independent innovation, and lay a solid foundation for independent and controllable development.
3. Integrate superior resources to achieve the integration of military and civilian development. We should organize and integrate relevant advantageous forces, promote the establishment of collaborative research and application mechanism and industrial alliance, achieve coordinated development, mutual benefit and win-win results, and fully absorb and learn from the advanced experience in the electronic materials industry at home and abroad. We will vigorously develop dual-use technology, promote the collaborative use of military and civilian technology and the two-way transformation of achievements, strengthen the social supply of scientific and technological achievements, give full play to the common and extensive supporting and leading role of military and civilian technology, and promote the in-depth development of military civilian integration of electronic materials.
4. Strengthen personnel training and actively introduce innovative talents. Implement the development strategy of innovative talents, establish the incentive and competition mechanism suitable for the development of innovative talents, increase the training of innovative talents in the field of electronic materials, create a large-scale scientific and technological innovation talents team with excellent quality and reasonable structure in the basic field, and absorb foreign high-level technical and management talents to provide talent support for independent innovation and development. (Pan Lin, chairman of China Electronic Materials Industry Association and director of the 46th Research Institute of China Electronic Technology Group)
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