In order to implement the tasks proposed in the "National Medium and Long-term Science and Technology Development Plan Outline (2006-2020)" and "Made in China 2025", the national key research and development plan initiated the implementation of the "Strategic Advanced Electronic Materials" key project. According to the deployment of this key special implementation plan, the 2018 project application guide is hereby issued.

The overall goal of this key project is to meet the country's urgent demand for strategic advanced electronic materials in the fields of energy conservation and environmental protection, intelligent manufacturing and new generation information technology, support major national strategic goals such as "made in China 2025" and "Internet", aim at the commanding heights of global technology and industry, seize the historic development opportunity of "changing lanes and overtaking" in China, and take the third generation semiconductor materials, semiconductor lighting and new display as the core, focusing on high-power laser materials and devices, high-end optoelectronics and microelectronic materials, through institutional mechanism innovation and cross-border technology integration, a full innovation chain of basic research and cutting-edge technologies, major common key technologies, and typical application demonstrations is built, and integrated Organization and implementation. Cultivate a group of innovative and entrepreneurial teams, cultivate a group of leading enterprises with international competitiveness, and form industrial bases with their own characteristics.

This key project is based on the third-generation semiconductor materials and semiconductor lighting, new display, high-power laser materials and devices, high-end optoelectronics and microelectronic materials 4 technical directions, a total of 35 research tasks. The special implementation cycle is 5 years (2016-2020).

In 2016, this key project has launched 27 projects with 15 research tasks in 4 technical directions. In 2017, 37 projects in 15 research missions were launched in 4 technical directions. In 2018, 5 research tasks will be launched in 4 technical directions, 12-24 projects will be supported, and the total estimated funds allocated by the state will be 0.177 billion yuan. All enterprise-led projects and typical application demonstration projects must raise supporting funds by themselves, and the ratio of the total supporting funds to the total funds allocated by the state shall not be less than 1:1.

Project declaration shall be carried out in accordance with the research direction of the secondary title of the guide (such as 1.1). Unless otherwise specified, the number of projects to be supported is 1-2. The implementation period of the project shall not exceed 4 years. The research content of the declared project shall cover all the assessment indicators listed in the guidelines under the secondary heading. In principle, the number of topics under the project shall not exceed 5, and the number of participating units of each topic shall not exceed 5 in principle. The project has one project leader, and each project in the project has one project leader.

In the guide, "the number of projects to be supported is 1-2" means that under the same research direction, when the first two evaluations of the declared project evaluation results are similar and the technical routes are obviously different, the two projects can be supported at the same time. Two projects will be supported in two phases. After the completion of the phase, the implementation of the two projects will be evaluated, and the follow-up support will be determined according to the evaluation results.

1. Research on new structural materials and new functional devices of the third generation semiconductor

Research on 1.1 ultra wide band gap semiconductor materials and devices (basic research)

Research contents: to carry out the growth, doping, defect control and photoelectric properties of ultra-wide band gap semiconductor single crystal substrates and epitaxial materials such as diamond, gallium oxide and boron nitride, to carry out the key process research of material processing and device preparation, and to develop high-performance devices based on the above-mentioned ultra-wide band gap semiconductor materials.

Assessment indicators: diamond semiconductor single crystal substrate and epitaxial material diameter ≥ 2 inches, X-ray rocking curve diffraction peak half-height width ≤ 50 arcsec, square root surface roughness ≤ 1 nm, doped diamond p-type hole concentration ≥ 1 × 1018 cm-3, n-type electron concentration ≥ 1 × 1016 cm-3, undoped diamond room temperature electron and hole mobility are 3000 cm2/v s and 2500 cm2/v s respectively, diamond prototype electronic devices and deep ultraviolet photoelectric devices have been developed. Gallium oxide single crystal material diameter ≥ 3 inches, dislocation density ≤ 104 cm-2, gallium oxide metal-oxide semiconductor field effect transistor (MOSFET) device has been developed, breakdown voltage ≥ 1000V, on-resistance ≤ 2 mΩ · cm2; High-quality boron nitride epitaxial film has been prepared, and boron nitride deep ultraviolet photodetector with wavelength ≤ 230 nm has been developed, device switching ratio ≥ 5 × 103. He applied for 15 invention patents and published 20 papers.

Research on new structural materials and new functional devices of 1.2 nitride semiconductors (basic research)

Research contents: study the controllable preparation of nitride semiconductor low-dimensional quantum structure, single photon emission device based on quantum dot structure, study the epitaxial growth of nitride semiconductor sub-band transition quantum well structure and ultraviolet and infrared two-color detector, study the nitride semiconductor terahertz emission and detector, study the spin properties of nitride semiconductor and spin field effect transistor.

Assessment indicators: realization of optically pumped ultraviolet or blue light band room temperature single photon source based on nitride semiconductor quantum structure, second-order correlation ≤ 0.3; Gallium nitride (GaN)-based 3~5 μm infrared detector operating temperature ≥ 77 K, realizing monolithic integration of ultraviolet infrared dual-color detector; GaN-based terahertz emission and detector devices operating at room temperature ≥ 0.3 THz, with output power ≥ 8 μW; the prototype device of nitride semiconductor spin field effect transistor is realized, and the spin injection efficiency is more than 8%. He applied for 15 invention patents and published 20 papers.

Research on the third generation semiconductor new lighting materials and devices in 1.3 (basic research)

Research contents: research on the third generation semiconductor laser for laser illumination; Research on fluorescent materials suitable for laser high power density excitation, development of laser illumination optical systems and application products; Research on full-spectrum white light illumination materials and devices based on single chip technology; Carry out epitaxial growth research and device development of high-quality nitride semiconductors on amorphous substrates, graphene and other insertion layers; Carry out research on high-efficiency LED based on new organic inorganic perovskite materials.

Assessment index: realize adjustable color temperature from laser warm white lighting (3000K) to cold white lighting (6000K), color rendering index reaches 85, and develop application products such as laser lighting for vehicles; Single chip full spectrum white light device efficiency ≥ 100 lm/W, color rendering index reached 90; Quantum efficiency in gallium nitride based LED chip based on new amorphous substrate ≥ 40%; perovskite LED brightness ≥ 105 cd/m2, external quantum efficiency ≥ 20%. He applied for 20 invention patents and published 15 papers.

2. Three primary color laser display production demonstration line

2.1 three-color laser display machine production demonstration line (typical application demonstration class)

Research content: Design the three-primary color laser display machine production demonstration line process, carry out the process, equipment and testing and other engineering development. The demonstration line includes: design and development of key process equipment for the whole machine; automatic detection technology and platform for high-efficiency laser drive system; detection technology and equipment development for various interferences such as laser display speckle; and automatic test system and platform for video signal fidelity response.