Over the past 40 years of reform and opening up, China's electronic materials industry has undergone tremendous changes, and the development of electronic materials technology is changing with each passing day. After years of development, China has accumulated a relatively strong research foundation in the field of electronic materials, formed a better ecological environment for the development of electronic materials, and reached the international advanced level in some fields. The development of electronic materials provides important technical support for the major transformation of China's electronic information manufacturing industry from scratch and from small to large, and provides an important guarantee for the construction of major projects and the consolidation of national defense. In the new era, with the improvement and rise of China's scientific and technological strength and national defense strength, it is imperative to enhance the supporting capacity of electronic materials industry, which is of great strategic significance to accelerate the transformation of China's economic development mode, enhance national defense strength and enhance comprehensive national strength.

The main achievements of the development of electronic materials in China

Electronic materials are the foundation and forerunner of electronic information technology, an important and potential field in the 21st century, the cradle of new technologies, new products and new equipment in the field of electronic information, and an important basic and leading industry. it supports the development of electronic information technology. The successful development of silicon single crystal materials, transistors and silicon-based integrated circuits gave birth to the electronic industrial revolution, and desktop computers represented by PCs entered thousands of households. The invention of optical fiber materials and semiconductor lasers based on gallium arsenide materials has enabled mankind to enter the era of optical fiber communication and high-speed, broadband information networks. Throughout the history of the development of information technology, it is not difficult to see that the major leapfrog development of various stages of information technology has experienced a generation of materials, a generation of devices, and a generation of new electronic systems.

Since the reform and opening up, after 40 years of development, China's electronic materials industry has formed a relatively complete electronic materials research and development system, the industrial scale has continued to expand, and the technical level has been continuously improved, which has better supported the development of the domestic electronic information manufacturing industry. Since the 18th National Congress of the Communist Party of China, the development of electronic materials has been highly valued by the country. In the "National Integrated Circuit Industry Development Promotion Outline", "13th Five-Year National Strategic Emerging Industry Development Plan", "Guiding Opinions on Accelerating the Innovation and Development of New Materials Industry", etc. In a series of oriented policies, advanced electronic materials are listed as key development and support objects, aiming to accelerate the development of my country's electronic materials industry and respond to a new round of materials.

At present, there are more than 1,000 colleges and universities, research institutes and production enterprises mainly engaged in the research and production of electronic materials in China. In the past three years, as the economic development has entered a new normal, the economic operation of the domestic electronic materials industry has also entered a normal development, with an average annual sales revenue growth rate of about 7%. At present, the overall scale of the domestic electronic materials market exceeds 700 billion yuan, of which the sales of major electronic materials with a large quantity and a wide range exceed 300 billion yuan. The industry as a whole is in a stable development trend, with a large proportion of low-end electronic materials. With the emphasis on technological innovation and the improvement of the understanding that quality is the lifeline of enterprises, the transformation and upgrading of high-end electronic materials products is accelerating.

The generation of semiconductor materials represented by silicon is the main basic material of integrated circuit manufacturing industry, which is called the "food" of information industry ". In the past two years, with the growth of market demand for 8-12 inch silicon wafers, domestic silicon wafer manufacturers have been booming. Shanghai Xinsheng Semiconductor Technology Co., Ltd., Chongqing Super Silicon, Ningxia Yinhe Semiconductor Technology Co., Ltd., Zhengzhou Hejing, Beijing Youyan, China Electric Power and other companies have invested in the construction, expansion and preparation of 8-inch and 12-inch silicon wafer production lines. At present, my country has achieved self-sufficiency in small-size silicon materials of 6 inches and below; the key technology of 8-inch silicon wafer industrialization has broken through, and the industrialization capability has been initially formed; the key technology of 12-inch silicon wafer has made breakthroughs, but the industrialization technology is not yet mature.

The second-generation semiconductor materials represented by gallium arsenide and indium phosphide have shown obvious advantages in microwave and millimeter wave devices, optoelectronic devices and other applications. At present, the 46th Institute of China Electronic Science and Technology Corporation has broken through the 4-inch semi-insulated gallium arsenide preparation technology, forming a batch supply capacity, partially replacing imported products, and 6-inch semi-insulated gallium arsenide single crystal has developed products. Low-resistance gallium arsenide materials for LED have been localized to meet the needs of LED industry. The 13th and 46th institutes of China Electronic Science and Technology Corporation and the Semiconductor Institute of Chinese Academy of Sciences are the main research units of InP materials, representing China's high level in the field of InP research, the 4-inch semi-insulated indium phosphide technology has broken through and reached the international advanced level.

The third-generation semiconductor materials represented by silicon carbide and gallium nitride are mainly used in high-frequency, high-power, power electronics and other devices. The domestic research and development units of silicon carbide materials mainly include the 2nd and 46th institutes of China Electronic Science and Technology Group Corporation, Tianke Heda, Shandong Tianyue, etc. The preparation technology of 4-inch and 6-inch semi-insulated silicon carbide has broken through, and 4-inch semi-insulated silicon carbide has been supplied in small quantities. Low-resistance silicon carbide single crystal has formed a certain industrialization capability, but the industrialization technology is not yet mature.

The ultra-wide band gap semiconductor materials represented by AlN, diamond and β-Ga2O3 are indispensable single crystal substrate materials for future high-frequency high-power microwave power devices, high-voltage, high-current power electronic devices, and high-sensitivity solar blind ultraviolet detectors. The main research and development units in China include the 46th Institute of China Electronics Technology Group Corporation, the Institute of Physics of the Chinese Academy of Sciences, the Shanghai Institute of Optics and Mechanics, the Shanghai Institute of Silicon, Xi 'an Jiaotong University, etc. At present, Φ 30mm ALN single crystal, 2-inch β-Ga2O3 single crystal and 12 × 12mm2 single crystal diamond have been obtained.

Development Problems and Challenges of China's Electronic Materials Industry

The achievements made in the development of China's electronic materials industry are obvious to all, but there is still a big gap compared with the world's advanced level. There are still some outstanding contradictions and problems in the development process, which restrict the further development of China's electronic materials industry, mainly reflected in the following four aspects:

1. The enterprise scale is small, the competitiveness is weak, and the R & D and equipment investment are insufficient. China's existing electronic materials enterprises are generally small in scale and relatively small in annual income. Compared with large international enterprises, R & D and equipment investment is small and competitiveness is weak. For example, in the field of semiconductor silicon materials, the total assets of Shin Yue (semiconductor materials) and SUMCO are both above 30 billion yuan, and the total assets of Wacker Shichuang are above 13 billion yuan. Xinyue's operating income is more than 15 billion yuan, SUMCO is more than 13 billion yuan and Wakshichuang is more than 8 billion yuan. Foreign companies usually spend 5% to 8% of their sales on research and development, and spend more than 10% of their sales on equipment investment. Most of the domestic electronic materials enterprises are small in scale, less operating income, and correspondingly, less investment in research and development and equipment, making it difficult to compete with large international enterprises.

2. The original innovation ability is insufficient, and the self-sufficiency rate of high-end products is not high. The original innovation ability of electronic materials in China is insufficient, the material research is mainly based on tracking research and imitation, the lack of in-depth communication between different disciplines and original theoretical research, and the technology with independent intellectual property rights is less, which can not support the development of materials from the source. Mature products are concentrated in low-end areas, with low added value and limited profits. High-end products rely on imports, which is not conducive to material production enterprises to expand reproduction and scientific and technological investment, which to a large extent restricts the leapfrog development of the electronic materials industry.

3. The combination of production, teaching and research is not close, and the industrialization ability is not strong. There is no effective "industry-university-research-application" coordination mechanism, the ability to transform scientific and technological achievements into the market is not strong, and the technical barriers between material manufacturers and application units have not been opened up. After a period of hard work, the performance indicators of many types of domestic electronic materials have reached A certain level, but because it started later than abroad, the total investment is also limited, therefore, in terms of quality consistency and stability, there are inevitably some gaps with foreign products, and this gap is difficult to narrow by relying solely on the efforts of the material research and development unit itself. It must rely on the joint efforts of the application unit and be improved through continuous application verification in order to be solved and realize industrial development.

The innovative R & D mechanism is not perfect, and it is difficult to adapt to the development requirements of the new era. The development of high-end electronic materials requires a group of high-level leading talents with solid basic theories and mastery of the world's cutting-edge technologies. At present, the implementation of relevant policies for talent incentives lacks implementation rules and specific guidance, some mechanisms are difficult to implement, the attraction of high-end talents is insufficient, and the vitality of talents has not been fully utilized. The policies and systems of intellectual property protection and achievement transformation need to be further improved. The conversion rate of scientific and technological achievements is not high, and new technology products do not support market development enough.

Suggestions on Promoting the Development of Electronic Materials Industry

1. Strengthen top-level planning and improve industrial policies. Strengthen government guidance, do a good job in top-level planning, increase national policies and financial support, formulate electronic materials industry development guidance catalogues and investment guidelines, and improve the industrial chain, innovation chain, and capital chain. Efforts will be made to break through the industrialization of high-end electronic materials and improve the basic support capacity and international competitiveness of electronic materials for China's electronic information industry.

2. Encourage original innovation and improve the level of independent innovation. Innovation is the first driving force for development, adhere to innovation as the leading, encourage original innovation, independent innovation, and create a scientific atmosphere for innovation in the entire industry. Aim at the cutting-edge technology of international electronic materials, form technological advantages in key areas, maintain advantages, improve independent innovation capabilities, and consolidate the foundation of independent and controllable development.

3. Integrate superior resources and realize the development of military-civilian integration. Organize and integrate relevant advantageous forces, promote the establishment of industry-university-research collaborative research mechanisms and industrial alliances, coordinated development, mutual benefit and win-win, and fully absorb and learn from the advanced experience of the electronic materials industry at home and abroad. Vigorously develop dual-use technologies, promote the coordinated interoperability of military and civilian technologies and the two-way transformation of results, strengthen the social supply of scientific and technological achievements, give full play to the common and extensive supporting and leading role of military and civilian technologies, and promote the in-depth development of military-civilian integration of electronic materials.

4. Strengthen personnel training and actively introduce innovative talents. Implement the development strategy of innovative talents, establish an incentive and competition mechanism suitable for the development of innovative talents, increase the training of innovative talents in the field of electronic materials, create a large-scale, high-quality, and reasonable structure of scientific and technological innovation talents in basic fields, and absorb foreign High-level technical and management talents provide talent support for independent innovation and development. (Pan Lin, Chairman of China Electronic Materials Industry Association and Director of the 46th Research Institute of China Electronics Technology Group Corporation)